Infineon Technologies AG Discrete Semiconductor AUIRFS8409

MOSFET N-CH 40V 195A D2PAK

AUIRFS8409 - 20V-40V N-Channel Automotive MOSFET

MOSFET N-CH 40V 195A D2PAK

N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount PG-TO263-3

Infineons Automotive-qualified COOLiRFETâ„¢ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
Channel Type = N
Maximum Continuous Drain Current = 195 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 1.2 mOhms
Maximum Gate Threshold Voltage = 3.9V
Minimum Gate Threshold Voltage = 2.2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Infineons Automotive-qualified COOLiRFETâ„¢ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
Channel Type = N
Maximum Continuous Drain Current = 195 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 1.2 mOhms
Maximum Gate Threshold Voltage = 3.9V
Minimum Gate Threshold Voltage = 2.2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single

Infineons Automotive-qualified COOLiRFETâ„¢ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
Channel Type = N
Maximum Continuous Drain Current = 195 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 1.2 mOhms
Maximum Gate Threshold Voltage = 3.9V
Minimum Gate Threshold Voltage = 2.2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single

Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 1149874-AUIRFS8409
Manufacturer Homepage: www.irf.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

MOSFET Auto 40V N-Ch FET 0.97mOhm 195A