STMicroelectronics, Inc. Single FETs, MOSFETs STP190N55LF3

N-Channel 55V 120A (Tc) 312W (Tc) Through Hole TO-220

N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package Product overview: STP190N55LF3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 55 V, 2.9 mOhm, 120 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55 V, 2.9 mOhm, 120 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP190N55LF3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 120A TO220-3

Manufacturer: STMicroelectronics
Win Source Part Number: 038053-STP190N55LF3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 312W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 80nC @ 5V
Max Input Capacitance: 6200pF @ 25V
Maximum Gate-Source Voltage: ±18V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): PSMN3R9-60PSQ; STP150NF55; STP80N6F6;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance