MOSFET N-CH 55V 120A TO220-3
Manufacturer: STMicroelectronics
Win Source Part Number: 038053-STP190N55LF3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 312W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 80nC @ 5V
Max Input Capacitance: 6200pF @ 25V
Maximum Gate-Source Voltage: ±18V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): PSMN3R9-60PSQ; STP150NF55; STP80N6F6;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
N-Channel 55V 120A (Tc) 312W (Tc) Through Hole TO-220
MOSFET N-CH 55V 120A TO220-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP190N55LF3 | 038053-STP190N55LF3 | 497-8810-5-ND | STP190N55LF3 | STP190N55LF3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP190N55LF3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 55 volts | 55 volts | |||
| IDSS | 120000 milliamps |
