MOSFET 2N-CH 60V 20A 5X6
Manufacturer: STMicroelectronics
Win Source Part Number: 1103206-STL7DN6LF3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PowerFlat (5x6)
Maximum Power Dissipation: 52W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 20A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 8.8nC @ 10V
Max Input Capacitance: 432pF @ 25V
Maximum Rds On at Id,Vgs: 43 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 60V 20A 52W Surface Mount PowerFlat™ (5x6)
Mosfet Array 2 N-Channel (Dual) 60V 20A 52W Surface Mount PowerFlat™ (5x6)
Mosfet Array 2 N-Channel (Dual) 60V 20A 52W Surface Mount PowerFlat™ (5x6)
MOSFET 2N-CH 60V 20A POWERFLAT
MOSFET Dual N-Ch 60V 35mOhm 6.5A STripFET III
MOSFET, DUAL N-CH, 60V, 20A, 52W; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STL7DN6LF3 | 1103206-STL7DN6LF3 | 497-13167-6-ND | STL7DN6LF3 | STL7DN6LF3 | 26AH0199 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL7DN6LF3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual N-Ch, 60V, 20A, 52W; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| IDSS | 20000 milliamps | 20000 milliamps | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
