The STI19NM65N is an N-channel 650 V MOSFET in the I²PAK package, designed for high-efficiency switching applications. It features a maximum drain-source voltage of 650 V, a continuous drain current of 15.5 A at 25 °C, and a maximum on-resistance of 0.27 Ω at 10 V gate-source voltage and 7.75 A drain current. The device has a total gate charge of 55 nC and an input capacitance of 1900 pF at 50 V. It is 100% avalanche tested, with a single pulse avalanche energy rating of 400 mJ. Maximum junction temperature is 150 °C, and the package meets ECOPACK® environmental standards. The part is qualified under AEC-Q200 and RoHS standards.
Win Source Part Number: 1278093-STI19NM65N
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ II
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STI19N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 1278093-STI19NM65N |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
