STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STI19NM65N

Win Source Part Number: 1278093-STI19NM65N Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ II Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 7.75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STI19N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V