STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI14NM65N STI14NM65N

Manufacturer: STMicroelectronics Win Source Part Number: 066393-STI14NM65N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1300pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Quantity per package: 50