STMicroelectronics, Inc. Single FETs, MOSFETs STH270N4F3-6

Description
MOSFET N-CH 40V 180A H2PAK
  • Single FETs, MOSFETs - STH270N4F3-6 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH270N4F3-6 - 031200-STH270N4F3-6 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-11218-2-ND - DigiKey
    DigiKey
  • Mosfet, N Ch, 40V, 180A, H2Pak-6; Channel Type Stmicroelectronics - 47T9311 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STH270N4F3-6 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 40V 180A H2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STH270N4F3-6 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STH270N4F3-6
Single FETs, MOSFETs STH270N4F3-6
MOSFET N-CH 40V 180A H2PAK

MOSFET N-CH 40V 180A H2PAK

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH270N4F3-6 - 031200-STH270N4F3-6 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH270N4F3-6
031200-STH270N4F3-6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH270N4F3-6 031200-STH270N4F3-6
Manufacturer: STMicroelectronics Win Source Part Number: 031200-STH270N4F3-6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: H2PAK Dimension: TO-263-7, D2Pak (6 Leads + Tab) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 180A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 7400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.7 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031200-STH270N4F3-6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: H2PAK
Dimension: TO-263-7, D2Pak (6 Leads + Tab)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 180A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 7400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.7 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-11218-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11218-2-ND
Single FETs, MOSFETs 497-11218-2-ND
N-Channel 40V 180A (Tc) 300W (Tc) Surface Mount H²PAK

N-Channel 40V 180A (Tc) 300W (Tc) Surface Mount H²PAK

Buy Now Datasheet
Mosfet, N Ch, 40V, 180A, H2Pak-6; Channel Type Stmicroelectronics - 47T9311 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 40V, 180A, H2Pak-6; Channel Type Stmicroelectronics
47T9311
Mosfet, N Ch, 40V, 180A, H2Pak-6; Channel Type Stmicroelectronics 47T9311
MOSFET, N CH, 40V, 180A, H2PAK-6; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N CH, 40V, 180A, H2PAK-6; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STH270N4F3-6
MOSFET STH270N4F3-6
MOSFET N-Ch 40V 1.40 mOhm STripFET III 180A

MOSFET N-Ch 40V 1.40 mOhm STripFET III 180A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STH270N4F3-6 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STH270N4F3-6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STH270N4F3-6
MOSFET N-CH 40V 180A H2PAK

MOSFET N-CH 40V 180A H2PAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STH270N4F3-6 031200-STH270N4F3-6 497-11218-2-ND 47T9311 STH270N4F3-6 STH270N4F3-6
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH270N4F3-6 Single FETs, MOSFETs Mosfet, N Ch, 40V, 180A, H2Pak-6; Channel Type Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts
IDSS 180000 milliamps 180000 milliamps
PD 300000 milliwatts 300000 milliwatts
Unlock Full Specs
to access all available technical data