STMicroelectronics, Inc. Single FETs, MOSFETs STH245N75F3-6

N-Channel 75V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6

Automotive-grade N-channel 75 V, 2.6 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package Product overview: STH245N75F3-6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 75 V, 2.6 mOhm, 180 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 75 V, 2.6 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH245N75F3-6 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 1261072-STH245N75F3-6
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: H2PAK-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-7, D2Pak (6 Leads + Tab)
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 75V
Id - Continuous Drain Current: 180A
Rds On (Maximum) at Id, Vgs: 3mOhm at 90A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 87nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 6800pF at 25V

MOSFET N-CH 75V 180A H2PAK-6