MOSFET N-CH 600V 28A TO220FP
Manufacturer: STMicroelectronics
Win Source Part Number: 814141-STF35N60DM2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 40W (Tc)
Popularity: Low
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 110mOhm at 14A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 54nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 100V
Current - Continuous Drain (Id) at 25°C: 28A (Tc)
Vgs(th) (Maximum) at Id: 5V at 250μA
Part Number Series: STF35N
Maximum Vgs: ±25V
MOSFET N-ch 600V 28A MDMesh DM2 TO-220FP
MOSFET N-ch 600V 28A MDMesh DM2 TO-220FP
MOSFET N-ch 600V 28A MDMesh DM2 TO-220FP
N-Channel 600V 28A (Tc) 40W (Tc) Through Hole TO-220FP
MOSFET N-CH 600V 28A TO220FP
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | STF35N60DM2 | 814141-STF35N60DM2 | 1116464 | 1116464P | 497-16358-5-ND | STF35N60DM2 |
| Product Name | Single FETs, MOSFETs | FETs - Single - STF35N60DM2 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 600 volts | |||||
| IDSS | 28000 milliamps | |||||
| PD | 40000 milliwatts | 40000 milliwatts |
