STMicroelectronics, Inc. FETs - Single - STF35N60DM2 STF35N60DM2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 814141-STF35N60DM2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600V Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 40W (Tc) Popularity: Low Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 110mOhm at 14A, 10V Gate Charge (Qg) (Maximum) at Vgs: 54nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 100V Current - Continuous Drain (Id) at 25°C: 28A (Tc) Vgs(th) (Maximum) at Id: 5V at 250μA Part Number Series: STF35N Maximum Vgs: ±25V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 814141-STF35N60DM2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600V Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 40W (Tc) Popularity: Low Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 110mOhm at 14A, 10V Gate Charge (Qg) (Maximum) at Vgs: 54nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 100V Current - Continuous Drain (Id) at 25°C: 28A (Tc) Vgs(th) (Maximum) at Id: 5V at 250μA Part Number Series: STF35N Maximum Vgs: ±25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STF35N60DM2 - 814141-STF35N60DM2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STF35N60DM2
814141-STF35N60DM2
FETs - Single - STF35N60DM2 814141-STF35N60DM2
Manufacturer: STMicroelectronics Win Source Part Number: 814141-STF35N60DM2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600V Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 40W (Tc) Popularity: Low Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 110mOhm at 14A, 10V Gate Charge (Qg) (Maximum) at Vgs: 54nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 100V Current - Continuous Drain (Id) at 25°C: 28A (Tc) Vgs(th) (Maximum) at Id: 5V at 250μA Part Number Series: STF35N Maximum Vgs: ±25V

Manufacturer: STMicroelectronics
Win Source Part Number: 814141-STF35N60DM2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 40W (Tc)
Popularity: Low
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 110mOhm at 14A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 54nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 100V
Current - Continuous Drain (Id) at 25°C: 28A (Tc)
Vgs(th) (Maximum) at Id: 5V at 250μA
Part Number Series: STF35N
Maximum Vgs: ±25V

Buy Now
Single FETs, MOSFETs - 497-16358-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16358-5-ND
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N-Channel 600V 28A (Tc) 40W (Tc) Through Hole TO-220FP

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Buy Now Datasheet
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Corby, Northants, United Kingdom
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MOSFET N-ch 600V 28A MDMesh DM2 TO-220FP

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MOSFETs - 1685890 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1685890
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MOSFET N-ch 600V 28A MDMesh DM2 TO-220FP

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Supplier's Site
Single FETs, MOSFETs - STF35N60DM2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF35N60DM2
Single FETs, MOSFETs STF35N60DM2
MOSFET N-CH 600V 28A TO220FP

MOSFET N-CH 600V 28A TO220FP

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF35N60DM2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF35N60DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF35N60DM2
MOSFET N-CH 600V 28A TO220FP

MOSFET N-CH 600V 28A TO220FP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 814141-STF35N60DM2 497-16358-5-ND 1116464 1116464P STF35N60DM2 STF35N60DM2
Product Name FETs - Single - STF35N60DM2 Single FETs, MOSFETs MOSFETs MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
PD 40000 milliwatts 40000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-220; To-220fp TO-220; TO-220 TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack
Packing Method Tube; Tube Tube; Tube
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