Manufacturer: STMicroelectronics
Win Source Part Number: 1260959-STF25N60M2-E
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 30W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 18A
Rds On (Maximum) at Id, Vgs: 188mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.75V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1090pF at 100V
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP package Product overview: STF25N60M2-EP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.175 Ohm, 18 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.175 Ohm, 18 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF25N60M2-EP can be used for catalog matching and distributor lookup.
N-Channel 600V 18A (Tc) 30W (Tc) Through Hole TO-220FP
MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP package
MOSFET N-CH 600V 18A TO220FP
MOSFET, N-CH, 600V, 18A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1260959-STF25N60M2-EP | 278-STF25N60M2-EP | 497-15886-5-ND | STF25N60M2-EP | STF25N60M2-EP | 45AC7569 |
| Product Name | FETs - Single - STF25N60M2-EP | N-Channel 600 V 0.175 Ohm 18 A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 18A, To-220Fp; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 600 volts | |||||
| PD | 30000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) |
