Manufacturer: STMicroelectronics
Win Source Part Number: 1260959-STF25N60M2-E
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 30W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 18A
Rds On (Maximum) at Id, Vgs: 188mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.75V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1090pF at 100V
N-Channel 600V 18A (Tc) 30W (Tc) Through Hole TO-220FP
MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP package
MOSFET N-CH 600V 18A TO220FP
MOSFET, N-CH, 600V, 18A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1260959-STF25N60M2-EP | 497-15886-5-ND | STF25N60M2-EP | STF25N60M2-EP | 45AC7569 |
| Product Name | FETs - Single - STF25N60M2-EP | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 18A, To-220Fp; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | ||||
| PD | 30000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
