STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7NM80 STD7NM80

Description
Manufacturer: STMicroelectronics Win Source Part Number: 031163-STD7NM80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Family Name: STD7NM80 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 620pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.05 Ohm @ 3.25A, 10V Alternative Parts (Cross-Reference): SPD04N80C3NT; MMD80R1K2PRH; SPD04N80C3ZT; Introduction Date: September 22, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 031163-STD7NM80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Family Name: STD7NM80 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 620pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.05 Ohm @ 3.25A, 10V Alternative Parts (Cross-Reference): SPD04N80C3NT; MMD80R1K2PRH; SPD04N80C3ZT; Introduction Date: September 22, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7NM80 - 031163-STD7NM80 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7NM80
031163-STD7NM80
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7NM80 031163-STD7NM80
Manufacturer: STMicroelectronics Win Source Part Number: 031163-STD7NM80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Family Name: STD7NM80 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 620pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.05 Ohm @ 3.25A, 10V Alternative Parts (Cross-Reference): SPD04N80C3NT; MMD80R1K2PRH; SPD04N80C3ZT; Introduction Date: September 22, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 031163-STD7NM80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Family Name: STD7NM80
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 620pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.05 Ohm @ 3.25A, 10V
Alternative Parts (Cross-Reference): SPD04N80C3NT; MMD80R1K2PRH; SPD04N80C3ZT;
Introduction Date: September 22, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-8807-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8807-2-ND
Single FETs, MOSFETs 497-8807-2-ND
N-Channel 800V 6.5A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 800V 6.5A (Tc) 90W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-8807-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8807-6-ND
Single FETs, MOSFETs 497-8807-6-ND
N-Channel 800V 6.5A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 800V 6.5A (Tc) 90W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-8807-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8807-1-ND
Single FETs, MOSFETs 497-8807-1-ND
N-Channel 800V 6.5A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 800V 6.5A (Tc) 90W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - STD7NM80 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD7NM80
Single FETs, MOSFETs STD7NM80
MOSFET N-CH 800V 6.5A DPAK

MOSFET N-CH 800V 6.5A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD7NM80 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD7NM80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD7NM80
MOSFET N-CH 800V 6.5A DPAK

MOSFET N-CH 800V 6.5A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
STD7NM80
MOSFET STD7NM80
MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A

MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 031163-STD7NM80 497-8807-2-ND STD7NM80 STD7NM80 STD7NM80
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7NM80 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 800 volts 800 volts
PD 90000 milliwatts 90000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data