STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N80K5 STD7N80K5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102917-STD7N80K5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STD7N80K5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 13.4nC @ 10V Max Input Capacitance: 360pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): TSM80N1R2CP ROG; 6NM80L-TN3-R; 6NM80G-TN3-R; MMD80R1K2PRH; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102917-STD7N80K5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STD7N80K5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 13.4nC @ 10V Max Input Capacitance: 360pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): TSM80N1R2CP ROG; 6NM80L-TN3-R; 6NM80G-TN3-R; MMD80R1K2PRH; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N80K5 - 1102917-STD7N80K5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N80K5
1102917-STD7N80K5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N80K5 1102917-STD7N80K5
Manufacturer: STMicroelectronics Win Source Part Number: 1102917-STD7N80K5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Family Name: STD7N80K5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 13.4nC @ 10V Max Input Capacitance: 360pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): TSM80N1R2CP ROG; 6NM80L-TN3-R; 6NM80G-TN3-R; MMD80R1K2PRH; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102917-STD7N80K5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STD7N80K5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 13.4nC @ 10V
Max Input Capacitance: 360pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V
Alternative Parts (Cross-Reference): TSM80N1R2CP ROG; 6NM80L-TN3-R; 6NM80G-TN3-R; MMD80R1K2PRH;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STD7N80K5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD7N80K5
Single FETs, MOSFETs STD7N80K5
MOSFET N-CH 800V 6A DPAK

MOSFET N-CH 800V 6A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13642-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13642-1-ND
Single FETs, MOSFETs 497-13642-1-ND
N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK

N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13642-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13642-6-ND
Single FETs, MOSFETs 497-13642-6-ND
N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK

N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13642-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13642-2-ND
Single FETs, MOSFETs 497-13642-2-ND
N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK

N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK

Buy Now Datasheet
Mosfet, N-Ch, 800V, 6A, To-252; Transistor Polarity Stmicroelectronics - 51AC9542 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 6A, To-252; Transistor Polarity Stmicroelectronics
51AC9542
Mosfet, N-Ch, 800V, 6A, To-252; Transistor Polarity Stmicroelectronics 51AC9542
MOSFET, N-CH, 800V, 6A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 800V, 6A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 800V 0.95 Ohm 6A MDmesh K5

MOSFET N-Ch 800V 0.95 Ohm 6A MDmesh K5

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD7N80K5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD7N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD7N80K5
MOSFET N-CH 800V 6A DPAK

MOSFET N-CH 800V 6A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1102917-STD7N80K5 STD7N80K5 497-13642-1-ND 51AC9542 STD7N80K5 STD7N80K5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N80K5 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 800V, 6A, To-252; Transistor Polarity Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
PD 110000 milliwatts 110000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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