800V 6A N-CH Power MOSFET DPAK TO-252 Product overview: STD7N80K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD7N80K5 can be used for catalog matching and distributor lookup.
N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1102917-STD7N80K5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STD7N80K5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 13.4nC @ 10V
Max Input Capacitance: 360pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3A, 10V
Alternative Parts (Cross-Reference): TSM80N1R2CP ROG; 6NM80L-TN3-R; 6NM80G-TN3-R; MMD80R1K2PRH;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
MOSFET N-CH 800V 6A DPAK
MOSFET N-Ch 800V 0.95 Ohm 6A MDmesh K5
MOSFET N-CH 800V 6A DPAK
MOSFET, N-CH, 800V, 6A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STD7N80K5 | 497-13642-1-ND | 1102917-STD7N80K5 | STD7N80K5 | STD7N80K5 | STD7N80K5 | 51AC9542 |
| Product Name | 800V 6A DPAK MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N80K5 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 6A, To-252; Transistor Polarity Stmicroelectronics |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 800 volts | 800 volts | 800 volts | ||||
| PD | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel |
