STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD70N02L-1 STD70N02L-1

Description
Manufacturer: STMicroelectronics Win Source Part Number: 066326-STD70N02L-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 1400pF @ 16V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 066326-STD70N02L-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 1400pF @ 16V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD70N02L-1 - 066326-STD70N02L-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD70N02L-1
066326-STD70N02L-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD70N02L-1 066326-STD70N02L-1
Manufacturer: STMicroelectronics Win Source Part Number: 066326-STD70N02L-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 1400pF @ 16V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 066326-STD70N02L-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 1400pF @ 16V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 066326-STD70N02L-1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD70N02L-1
Polarity N-Channel; N-Channel
V(BR)DSS 25 volts
PD 60000 milliwatts
Unlock Full Specs
to access all available technical data