STMicroelectronics, Inc. Single FETs, MOSFETs STD65N3LLH5

Description
MOSFET N CH 30V 65A DPAK
Request a Quote Datasheet
Description
MOSFET N CH 30V 65A DPAK
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - STD65N3LLH5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD65N3LLH5
Single FETs, MOSFETs STD65N3LLH5
MOSFET N CH 30V 65A DPAK

MOSFET N CH 30V 65A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13425-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13425-2-ND
Single FETs, MOSFETs 497-13425-2-ND
N-Channel 30V 65A (Tc) 50W (Tc) Surface Mount DPAK

N-Channel 30V 65A (Tc) 50W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD65N3LLH5 - 1102906-STD65N3LLH5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD65N3LLH5
1102906-STD65N3LLH5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD65N3LLH5 1102906-STD65N3LLH5
Manufacturer: STMicroelectronics Win Source Part Number: 1102906-STD65N3LLH5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 65A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8nC @ 4.5V Max Input Capacitance: 1290pF @ 25V Maximum Gate-Source Voltage: ±22V Maximum Rds On at Id,Vgs: 6.9 mOhm @ 32.5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1102906-STD65N3LLH5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 65A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 8nC @ 4.5V
Max Input Capacitance: 1290pF @ 25V
Maximum Gate-Source Voltage: ±22V
Maximum Rds On at Id,Vgs: 6.9 mOhm @ 32.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 30V 0.0061Ohm 65A pwr STripFET V

MOSFET N-Ch 30V 0.0061Ohm 65A pwr STripFET V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD65N3LLH5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD65N3LLH5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD65N3LLH5
MOSFET N CH 30V 65A DPAK

MOSFET N CH 30V 65A DPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STD65N3LLH5 497-13425-2-ND 1102906-STD65N3LLH5 STD65N3LLH5 STD65N3LLH5
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD65N3LLH5 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 65000 milliamps
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