STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NC45 STD2NC45

Description
Manufacturer: STMicroelectronics Win Source Part Number: 066309-STD2NC45 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 450V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 3.7V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 160pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 066309-STD2NC45 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 450V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 3.7V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 160pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NC45 - 066309-STD2NC45 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NC45
066309-STD2NC45
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NC45 066309-STD2NC45
Manufacturer: STMicroelectronics Win Source Part Number: 066309-STD2NC45 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 450V Continuous Drain Current at 25°C: 1.5A (Tc) Gate-Source Threshold Voltage: 3.7V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 160pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 066309-STD2NC45
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 450V
Continuous Drain Current at 25°C: 1.5A (Tc)
Gate-Source Threshold Voltage: 3.7V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 160pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 066309-STD2NC45
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD2NC45
Polarity N-Channel; N-Channel
V(BR)DSS 450 volts
PD 30000 milliwatts
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