650V 9A N-CH MOSFET DPAK 480mR Rds(on) Product overview: STD11N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD11N65M5 can be used for catalog matching and distributor lookup.
N-Channel 650V 9A (Tc) 85W (Tc) Surface Mount DPAK
N-Channel 650V 9A (Tc) 85W (Tc) Surface Mount DPAK
N-Channel 650V 9A (Tc) 85W (Tc) Surface Mount DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031108-STD11N65M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Family Name: STD11N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 620pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 480 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): IPD60R385CPX; R6011END3TL1; MMD60R360PRH; IPD60R380C6;
Introduction Date: February 23, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2032
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
MOSFET N CH 650V 9A DPAK
MOSFET, N-CH, 650V, 9A, 85W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.43ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-Ch 650V 0.43 Ohm 9A MDmesh M5 MOS
MOSFET N CH 650V 9A DPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STD11N65M5 | 497-12935-2-ND | 031108-STD11N65M5 | STD11N65M5 | 07AH6953 | STD11N65M5 | STD11N65M5 |
| Product Name | 650V 9A DPAK MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD11N65M5 | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 9A, 85W, To-252; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| PD | 85000 milliwatts | 85000 milliwatts | 85000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); DPAK | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
| V(BR)DSS | 650 volts | 650 volts |
