600V 8A N-CH MOSFET DPAK 600mR Product overview: STD10NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 8A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD10NM60ND can be used for catalog matching and distributor lookup.
N-Channel 600V 8A (Tc) 70W (Tc) Surface Mount DPAK
N-Channel 600V 8A (Tc) 70W (Tc) Surface Mount DPAK
N-Channel 600V 8A (Tc) 70W (Tc) Surface Mount DPAK
MOSFET N-CH 600V 8A DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1102840-STD10NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 577pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): IPD60R600C6; TSM60N900CP ROG; TSM60NB900CP ROG;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 8A DPAK
MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
MOSFET Transistor, N Channel, 8 A, 600 V, 0.57 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET, N CH, 600V, 8A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.57ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STD10NM60ND | 497-12239-6-ND | STD10NM60ND | 1102840-STD10NM60ND | STD10NM60ND | STD10NM60ND | 94T3328 | 87T3740 |
| Product Name | 600V 8A DPAK MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10NM60ND | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 8 A, 600 V, 0.57 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics | Mosfet, N Ch, 600V, 8A, To-252; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 70000 milliwatts | 70000 milliwatts | 70000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); DPAK | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
