Manufacturer: STMicroelectronics
Win Source Part Number: 1102840-STD10NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 577pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): IPD60R600C6; TSM60N900CP ROG; TSM60NB900CP ROG;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 8A DPAK
N-Channel 600V 8A (Tc) 70W (Tc) Surface Mount DPAK
N-Channel 600V 8A (Tc) 70W (Tc) Surface Mount DPAK
N-Channel 600V 8A (Tc) 70W (Tc) Surface Mount DPAK
MOSFET Transistor, N Channel, 8 A, 600 V, 0.57 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET, N CH, 600V, 8A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.57ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
MOSFET N-CH 600V 8A DPAK
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1102840-STD10NM60ND | STD10NM60ND | 497-12239-6-ND | 94T3328 | 87T3740 | STD10NM60ND | STD10NM60ND |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD10NM60ND | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 8 A, 600 V, 0.57 Ohm, 10 V, 4 V Rohs Compliant Stmicroelectronics | Mosfet, N Ch, 600V, 8A, To-252; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 70000 milliwatts | 70000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; TO-252 (DPAK); DPAK | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
