Manufacturer: STMicroelectronics
Win Source Part Number: 031088-STB80NF03L-04
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: STB80NF03L-04
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -60°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 110nC @ 4.5V
Max Input Capacitance: 5500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): SPB80N03S2-03 E3045A; IRF1503SPBF; H7N0308LM;
Introduction Date: March 17, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
N-Channel 30V 80A (Tc) 300W (Tc) Surface Mount D2PAK
N-Channel 30V 80A (Tc) 300W (Tc) Surface Mount D2PAK
MOSFET N-CH 30V 80A D2PAK
MOSFET, N-CH, 30V, 80A, 175DEG C, 300W ROHS COMPLIANT: YES
MOSFET N-CH 30V 80A D2PAK
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 031088-STB80NF03L-04T4 | 497-7952-2-ND | STB80NF03L-04T4 | STB80NF03L-04T4 | 69AH2681 | STB80NF03L-04T4 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB80NF03L-04T4 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 80A, 175Deg C, 300W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 300000 milliwatts | 300000 milliwatts | ||||
| TJ | -60 to 175 C (-76 to 347 F) | -60 to 175 C (-76 to 347 F) |
