STMicroelectronics, Inc. Single FETs, MOSFETs STB80NF03L-04T4

MOSFET N-CH 30V 80A D2PAK

N-Channel 30V 80A (Tc) 300W (Tc) Surface Mount D2PAK

N-Channel 30V 80A (Tc) 300W (Tc) Surface Mount D2PAK

30V 80A N-Ch MOSFET D2PAK 4mR RdsOn Product overview: STB80NF03L-04T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB80NF03L-04T4 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 031088-STB80NF03L-04T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: STB80NF03L-04
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -60°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 110nC @ 4.5V
Max Input Capacitance: 5500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): SPB80N03S2-03 E3045A; IRF1503SPBF; H7N0308LM;
Introduction Date: March 17, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance