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Qorvo 1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor QPD1028L

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1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor - QPD1028L - Qorvo
Greensboro, NC, United States
1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor
QPD1028L
1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor QPD1028L
The QPD1028L is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations. Evaluation boards are available upon request.

The QPD1028L is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.
Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.
Evaluation boards are available upon request.

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD1028L
Product Name 1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor
Transistor Technology / Material 1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor
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