MOSFET N-CH 500V 35A D2PAK
N-Channel 500V 35A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 500V 35A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 500V 35A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Automotive-grade N-channel 500 V, 0.07 Ohm typ., 35 A MDmesh DM2 Power MOSFET in a D2PAK package Product overview: STB45N50DM2AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 500 V, 0.07 Ohm, 35 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 500 V, 0.07 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB45N50DM2AG can be used for catalog matching and distributor lookup.
Win Source Part Number: 999016-STB45N50DM2AG
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, MDmesh™ DM2
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16134-6,497-1613
Base Product Number: STB45
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, AEC-Q101, N-CH, 500V, 35A, 250W ROHS COMPLIANT: YES
MOSFET Automotive-grade N-channel 500 V, 0.07 Ohm typ., 35 A MDmesh DM2 Power MOSFET in a D2PAK package
MOSFET N-CH 500V 35A D2PAK
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STB45N50DM2AG | 497-16134-6-ND | 278-STB45N50DM2AG | 999016-STB45N50DM2AG | 69AH2676 | STB45N50DM2AG | STB45N50DM2AG |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Automotive N-Channel 500 V 0.07 Ohm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, Aec-Q101, N-Ch, 500V, 35A, 250W Rohs Compliant Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 500 volts | ||||||
| IDSS | 35000 milliamps | ||||||
| PD | 250000 milliwatts | 250000 milliwatts |