N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package Product overview: STB33N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.117 Ohm, 24 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.117 Ohm, 24 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB33N65M2 can be used for catalog matching and distributor lookup.
N-Channel 650V 24A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 24A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 24A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 650V 24A D2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1260643-STB33N65M2
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 24A
Rds On (Maximum) at Id, Vgs: 140mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 41.5nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1790pF at 100V
MOSFET N-CH 650V 24A D2PAK
MOSFET N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package
MOSFET, N-CH, 650V, 24A, 150DEG C, 190W ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STB33N65M2 | 497-15457-6-ND | STB33N65M2 | 1260643-STB33N65M2 | STB33N65M2 | STB33N65M2 | 69AH2674 |
| Product Name | N-Channel 650 V 0.117 Ohm 24 A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - STB33N65M2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 24A, 150Deg C, 190W Rohs Compliant Stmicroelectronics |
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; SOT3 | 1790 pF @ 100 V | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
