Manufacturer: STMicroelectronics
Win Source Part Number: 1260643-STB33N65M2
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 190W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 24A
Rds On (Maximum) at Id, Vgs: 140mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 41.5nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1790pF at 100V
MOSFET N-CH 650V 24A D2PAK
N-Channel 650V 24A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 24A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 650V 24A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
MOSFET, N-CH, 650V, 24A, 150DEG C, 190W ROHS COMPLIANT: YES
MOSFET N-CH 650V 24A D2PAK
MOSFET N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1260643-STB33N65M2 | STB33N65M2 | 497-15457-6-ND | 69AH2674 | STB33N65M2 | STB33N65M2 |
| Product Name | FETs - Single - STB33N65M2 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 24A, 150Deg C, 190W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 650 volts | 650 volts | ||||
| PD | 190000 milliwatts | 190000 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) |
