STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB20NM60D STB20NM60D

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102778-STB20NM60D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 192W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 290 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): TK14G65W5; STB24N60M2; STB28N60M2; STB20NM60D; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102778-STB20NM60D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 192W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 290 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): TK14G65W5; STB24N60M2; STB28N60M2; STB20NM60D; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB20NM60D - 1102778-STB20NM60D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB20NM60D
1102778-STB20NM60D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB20NM60D 1102778-STB20NM60D
Manufacturer: STMicroelectronics Win Source Part Number: 1102778-STB20NM60D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 192W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 52nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 290 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): TK14G65W5; STB24N60M2; STB28N60M2; STB20NM60D; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1102778-STB20NM60D
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 192W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 290 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): TK14G65W5; STB24N60M2; STB28N60M2; STB20NM60D;
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore, Singapore
600V 20A MOSFET Transistor
278-STB20NM60D
600V 20A MOSFET Transistor 278-STB20NM60D
600V 20A N-CH MOSFET D2PAK, 290mR RdsOn Product overview: STB20NM60D from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB20NM60D can be used for catalog matching and distributor lookup.

600V 20A N-CH MOSFET D2PAK, 290mR RdsOn Product overview: STB20NM60D from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB20NM60D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STB20NM60D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STB20NM60D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STB20NM60D
MOSFET N-CH 600V 20A D2PAK

MOSFET N-CH 600V 20A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N Ch 600V 0.26 Ohm 20A

MOSFET N Ch 600V 0.26 Ohm 20A

Buy Now Datasheet
Single FETs, MOSFETs - STB20NM60D - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STB20NM60D
Single FETs, MOSFETs STB20NM60D
MOSFET N-CH 600V 20A D2PAK

MOSFET N-CH 600V 20A D2PAK

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102778-STB20NM60D 278-STB20NM60D STB20NM60D STB20NM60D STB20NM60D
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STB20NM60D 600V 20A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
PD 192000 milliwatts 192000 milliwatts 192000 milliwatts
TJ -65 to 150 C (-85 to 302 F) -65 C (-85 F) -65 to 150 C (-85 to 302 F)
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