STMicroelectronics, Inc. 600V 13A MOSFET Transistor STB18NM60ND

600V 13A N-CH MOSFET, 290mR RdsOn, D2PAK, Fast Diode Product overview: STB18NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STB18NM60ND can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 13A D2PAK

N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

Manufacturer: STMicroelectronics
Win Source Part Number: 142931-STB18NM60ND
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Family Name: STB18NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1030pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 290 mOhm @ 6.5A, 10V
Alternative Parts (Cross-Reference): IPB60R385CPXT; IPB60R299CPAXT; IPB50R250CPXT; IPB50R250CPATMA1;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited