SICFET N-CH 1200V 65A HIP247
N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™
Manufacturer: STMicroelectronics
Win Source Part Number: 1247262-SCT50N120
Manufacturer Homepage: www.st.com
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 1.2KV, 65A, HIP247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
SICFET N-CH 1200V 65A HIP247
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SCT50N120 | 497-16598-5-ND | 1247262-SCT50N120 | 51AC9528 | SCT50N120 | SCT50N120 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT50N120 | Mosfet, N-Ch, 1.2Kv, 65A, Hip247; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | ||||
| V(BR)DSS | 1200 volts | |||||
| IDSS | 65000 milliamps | 65000 milliamps | ||||
| PD | 318000 milliwatts |
