SICFET N-CH 1200V 65A HIP247
Manufacturer: STMicroelectronics
Win Source Part Number: 1247262-SCT50N120
Manufacturer Homepage: www.st.com
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package Product overview: SCT50N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 65 A, 59 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 65 A, 59 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT50N120 can be used for catalog matching and distributor lookup.
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
MOSFET, N-CH, 1.2KV, 65A, HIP247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
SICFET N-CH 1200V 65A HIP247
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SCT50N120 | 1247262-SCT50N120 | 497-16598-5-ND | 278-SCT50N120 | SCT50N120 | 51AC9528 | SCT50N120 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT50N120 | Single FETs, MOSFETs | 1200 V 65 A 59 mOhm MOSFET Transistor | MOSFET | Mosfet, N-Ch, 1.2Kv, 65A, Hip247; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | |||||
| V(BR)DSS | 1200 volts | ||||||
| IDSS | 65000 milliamps | 65000 milliamps | |||||
| PD | 318000 milliwatts |
