STMicroelectronics, Inc. Single FETs, MOSFETs SCT50N120

Description
SICFET N-CH 1200V 65A HIP247
Request a Quote Datasheet
Description
SICFET N-CH 1200V 65A HIP247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SCT50N120 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SCT50N120
Single FETs, MOSFETs SCT50N120
SICFET N-CH 1200V 65A HIP247

SICFET N-CH 1200V 65A HIP247

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT50N120 - 1247262-SCT50N120 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT50N120
1247262-SCT50N120
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT50N120 1247262-SCT50N120
Manufacturer: STMicroelectronics Win Source Part Number: 1247262-SCT50N120 Manufacturer Homepage: www.st.com Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1247262-SCT50N120
Manufacturer Homepage: www.st.com
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now
Single FETs, MOSFETs - 497-16598-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16598-5-ND
Single FETs, MOSFETs 497-16598-5-ND
N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™

N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™

Buy Now Datasheet
Singapore
1200 V 65 A 59 mOhm MOSFET Transistor
278-SCT50N120
1200 V 65 A 59 mOhm MOSFET Transistor 278-SCT50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package Product overview: SCT50N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 65 A, 59 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 65 A, 59 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT50N120 can be used for catalog matching and distributor lookup.

Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package Product overview: SCT50N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 65 A, 59 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 65 A, 59 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT50N120 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package

MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package

Buy Now Datasheet
Mosfet, N-Ch, 1.2Kv, 65A, Hip247; Transistor Polarity Stmicroelectronics - 51AC9528 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 65A, Hip247; Transistor Polarity Stmicroelectronics
51AC9528
Mosfet, N-Ch, 1.2Kv, 65A, Hip247; Transistor Polarity Stmicroelectronics 51AC9528
MOSFET, N-CH, 1.2KV, 65A, HIP247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 1.2KV, 65A, HIP247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SCT50N120 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SCT50N120
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SCT50N120
SICFET N-CH 1200V 65A HIP247

SICFET N-CH 1200V 65A HIP247

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SCT50N120 1247262-SCT50N120 497-16598-5-ND 278-SCT50N120 SCT50N120 51AC9528 SCT50N120
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT50N120 Single FETs, MOSFETs 1200 V 65 A 59 mOhm MOSFET Transistor MOSFET Mosfet, N-Ch, 1.2Kv, 65A, Hip247; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts
IDSS 65000 milliamps 65000 milliamps
PD 318000 milliwatts
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