Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package Product overview: SCT50N120 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 65 A, 59 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 65 A, 59 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SCT50N120 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1247262-SCT50N120
Manufacturer Homepage: www.st.com
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™
MOSFET, N-CH, 1.2KV, 65A, HIP247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
SICFET N-CH 1200V 65A HIP247
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
SICFET N-CH 1200V 65A HIP247
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SCT50N120 | 1247262-SCT50N120 | 497-16598-5-ND | 51AC9528 | SCT50N120 | SCT50N120 | SCT50N120 |
| Product Name | 1200 V 65 A 59 mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SCT50N120 | Single FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 65A, Hip247; Transistor Polarity Stmicroelectronics | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT3 | TO-247; TO-247-3 | TO-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | ||
| Polarity | N-Channel | N-Channel; N-Channel | |||||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | |||||
| IDSS | 65000 milliamps | 65000 milliamps | |||||
| rDS(on) | 0.0520 ohms |
