Qorvo 2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor QPD0005

Description
The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8.7 W at +48 V operation. Lead free and RoHS compliant.
  • 2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor - QPD0005 - Qorvo
    Qorvo
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Description
The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8.7 W at +48 V operation. Lead free and RoHS compliant.
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2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor - QPD0005 - Qorvo
Qorvo
Greensboro, NC, United States
2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor
QPD0005
2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor QPD0005
The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8.7 W at +48 V operation. Lead free and RoHS compliant.

The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8.7 W at +48 V operation.

Lead free and RoHS compliant.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD0005
Product Name 2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor
Transistor Technology / Material 2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor
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