STMicroelectronics, Inc. Single FETs, MOSFETs SCT019HU120G3AG

The SCT019HU120G3AG is an automotive-grade silicon carbide MOSFET rated for 1200 V drain-source voltage, with a typical on-resistance of 19.2 mΩ at 25 °C and a continuous drain current of 90 A at 25 °C. It is packaged in an HU3PAK format with dimensions between 11.70 mm and 11.90 mm in length, 13.90 mm and 14.10 mm in width, and 18.00 mm and 19.00 mm in height, and is supplied in tape and reel packaging. The device is AEC-Q101 qualified and features a junction temperature range of -55 °C to 175 °C, a thermal resistance from junction to case of 0.30 °C/W, and a fast intrinsic body diode with a reverse recovery charge of 152 nC at 40 A. It supports high-speed switching and includes a source sensing pin for improved efficiency.