STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - P60NF06L P60NF06L

Description
Manufacturer: STMicroelectronics Win Source Part Number: 061013-P60NF06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V, 5V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 66nC @ 4.5V Max Input Capacitance: 2000pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 14 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 061013-P60NF06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V, 5V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 66nC @ 4.5V Max Input Capacitance: 2000pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 14 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - P60NF06L - 061013-P60NF06L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P60NF06L
061013-P60NF06L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - P60NF06L 061013-P60NF06L
Manufacturer: STMicroelectronics Win Source Part Number: 061013-P60NF06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V, 5V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 66nC @ 4.5V Max Input Capacitance: 2000pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 14 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 061013-P60NF06L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V, 5V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 66nC @ 4.5V
Max Input Capacitance: 2000pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 14 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 061013-P60NF06L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - P60NF06L
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 110000 milliwatts
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