STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - P60NF06L P60NF06L

Manufacturer: STMicroelectronics
Win Source Part Number: 061013-P60NF06L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V, 5V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 66nC @ 4.5V
Max Input Capacitance: 2000pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 14 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited

MOSFET N-CH 60V 60A TO-220 Product overview: P60NF06L from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 60A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 60A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-P60NF06L can be used for catalog matching and distributor lookup.