STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - B16NK65Z B16NK65Z

Description
Manufacturer: STMicroelectronics Win Source Part Number: 079365-B16NK65Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 89nC @ 10V Max Input Capacitance: 2750pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 500 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 079365-B16NK65Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 89nC @ 10V Max Input Capacitance: 2750pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 500 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - B16NK65Z - 079365-B16NK65Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - B16NK65Z
079365-B16NK65Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - B16NK65Z 079365-B16NK65Z
Manufacturer: STMicroelectronics Win Source Part Number: 079365-B16NK65Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 89nC @ 10V Max Input Capacitance: 2750pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 500 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 079365-B16NK65Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 89nC @ 10V
Max Input Capacitance: 2750pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 500 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 079365-B16NK65Z
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - B16NK65Z
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 190000 milliwatts
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