STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - B16NK65Z B16NK65Z

Manufacturer: STMicroelectronics
Win Source Part Number: 079365-B16NK65Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 89nC @ 10V
Max Input Capacitance: 2750pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 500 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

MOSFET N-CH 650V 13A I2SPAK Product overview: B16NK65Z from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 13A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-B16NK65Z can be used for catalog matching and distributor lookup.