STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - B100NH02L B100NH02L

Description
Manufacturer: STMicroelectronics Win Source Part Number: 079358-B100NH02L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2850pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 079358-B100NH02L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2850pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - B100NH02L - 079358-B100NH02L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - B100NH02L
079358-B100NH02L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - B100NH02L 079358-B100NH02L
Manufacturer: STMicroelectronics Win Source Part Number: 079358-B100NH02L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 24V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 1.8V @ 250μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 2850pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 079358-B100NH02L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 2850pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 079358-B100NH02L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - B100NH02L
Polarity N-Channel; N-Channel
V(BR)DSS 24 volts
PD 100000 milliwatts
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