SMC Diode Solutions Co., Ltd Single FETs, MOSFETs S2M0040120N-1

S2M0040120N-1 is a 1200V silicon carbide power MOSFET in a SOT-227 package, designed for high-efficiency switching applications such as EV charging, solar inverters, and UPS systems. It has a drain-source on-state resistance of 52 mΩ at 25°C and 73 mΩ at 175°C, with a continuous drain current of 39 A at 100°C and a pulsed current rating of 160 A. The device features a robust intrinsic body diode with a reverse recovery time of 43.4 ns and a peak reverse recovery current of 8.1 A. Maximum gate-source voltage is ±25 V dynamic and ±20 V static. Thermal resistance junction-to-case is 0.43°C/W, and the junction temperature range is -55°C to +175°C. The part is AEC-Q101 qualified and uses non-bright tin electroplating on terminals. Copper-DBC isolation and nickel-plated base plate are included.