The QPD2194 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor.
The QPD2194 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2194 can deliver PSAT of 371 W at +48 V operation.
Lead-free and ROHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
| Qorvo | |
|---|---|
| Product Category | RF Transistors |
| Product Number | QPD2194 |
| Product Name | 300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor |
| Transistor Technology / Material | GaN |
