SemiQ Inc. Single FETs, MOSFETs GP3T080A120TS

The GP3T080A120TS is a 1200V silicon carbide MOSFET in a TSPAK package measuring 12.14mm x 14.00mm, designed for high-efficiency power conversion in applications such as solar inverters, EV charging, and motor drives. It features a drain-source on-resistance of 80mΩ at 25°C and 10A gate drive, with a continuous drain current of 27A at 25°C case temperature and 19A at 100°C. The device is avalanche rated to 160mJ, supports top-side cooling via a ceramic-isolated back paddle, and operates from -55°C to 175°C junction temperature. It meets RoHS compliance per EU Directive 2011/65/EC, and includes a driver source pin for improved gate control. Thermal resistance from junction to case is 1.25-1.47°C/W.