The GCMX007C120S1-E1 is a 1200 V silicon carbide MOSFET power module in a SOT-227 package, designed for high-efficiency switching in applications such as photovoltaic inverters, battery chargers, and server power supplies. It features a continuous drain current of 192 A at 25°C case temperature and a drain-source on-resistance of 7.4 mΩ at 25°C. The device has a junction-to-case thermal resistance of 0.23-0.28°C/W, an avalanche energy rating of 800 mJ, and operates with a maximum junction temperature of 175°C. The package includes an isolated backplate for direct heatsink mounting and a Kelvin source connection for stable gate drive. The part is RoHS compliant and qualified to JEDEC JESD22-A104 Condition G.
GEN3 1200V 7M SIC MOSFET MODULE,
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1560-GCMX007C120S1-E1-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
