UT6MA3 is a 20V N-channel and P-channel middle power MOSFET in a DFN2020-8D package, designed for switching applications. The N-channel device has a maximum drain-source voltage of 20V, continuous drain current of ±5.5A, and on-resistance of 42mΩ at 4.5V gate drive; the P-channel device has a maximum drain-source voltage of -20V, continuous drain current of ±5.0A, and on-resistance of 59mΩ at -4.5V gate drive. Both devices feature a power dissipation rating of 2.0W, operate over a junction temperature range of -55°C to +150°C, and are RoHS compliant and halogen-free.
UT6MA3 is Low on-resistance Middle Power MOSFET for switching application.
UT6MA3 is Low on-resistance Middle Power MOSFET for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | UT6MA3 | UT6MA3 |
| Product Name | 20V Nch+Pch Middle Power MOSFET | 20V Nch+Pch Middle Power MOSFET |
| Polarity | N-Channel; P-Channel | N-Channel; P-Channel |
| V(BR)DSS | 20 volts | 20 volts |
| IDSS | 5500 milliamps | 5500 milliamps |
| QG | 4 nC | 4 nC |
| PD | 2000 milliwatts | 2000 milliwatts |
