UT6MA2 is a 30V N-channel and P-channel middle power MOSFET in a DFN2020-8D package, designed for switching applications. It has a continuous drain current of ±4.0A, a maximum power dissipation of 2.0W, and thermal resistance junction-to-ambient of 62.5℃/W when mounted on a 40×40×0.8mm copper board. The N-channel device has a maximum R_DS(on) of 46mΩ at V_GS = 10V and I_D = 4.0A, while the P-channel device has a maximum R_DS(on) of 70mΩ at V_GS = -10V and I_D = -4.0A. Both devices have gate-source voltage ratings of ±20V, operate over a junction temperature range of -55℃ to +150℃, and meet RoHS and halogen-free requirements.
UT6MA2 is small surface mount package MOSFET which is suitable for switching application.
UT6MA2 is small surface mount package MOSFET which is suitable for switching application.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | UT6MA2 | UT6MA2 |
| Product Name | 30V Nch+Pch Middle Power MOSFET | 30V Nch+Pch Middle Power MOSFET |
| Polarity | N-Channel; P-Channel | N-Channel; P-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 4000 milliamps | 4000 milliamps |
| QG | 2.2 nC | 2.2 nC |
| PD | 2000 milliwatts | 2000 milliwatts |
