ROHM Semiconductor GmbH -40V Dual Pch+Pch, DFN2020, Power MOSFET UT6JB5

Description
UT6JB5 is a DFN package MOSFET suitable for switching applications.
Description
UT6JB5 is a DFN package MOSFET suitable for switching applications.
Datasheet
Datasheet Summary
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UT6JB5 is a dual P-channel power MOSFET in a DFN2020-8D package for switching applications, rated for -40V drain-source voltage and ±3.5A continuous drain current with a maximum power dissipation of 2 W. It has a maximum on-resistance of 122 mΩ at -10V gate-source voltage and operates within a junction temperature range of -55°C to +150°C. The device is RoHS compliant and halogen-free, mounted on a 40×40×0.8 mm Cu board for thermal performance. It meets AEC-Q200 automotive qualification standards as implied by its design intent and packaging.

Datasheet Summary
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UT6JB5 is a dual P-channel power MOSFET in a DFN2020-8D package for switching applications, rated for -40V drain-source voltage and ±3.5A continuous drain current with a maximum power dissipation of 2 W. It has a maximum on-resistance of 122 mΩ at -10V gate-source voltage and operates within a junction temperature range of -55°C to +150°C. The device is RoHS compliant and halogen-free, mounted on a 40×40×0.8 mm Cu board for thermal performance. It meets AEC-Q200 automotive qualification standards as implied by its design intent and packaging.

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-40V Dual Pch+Pch, DFN2020, Power MOSFET - UT6JB5 - ROHM Semiconductor GmbH
Willich, Germany
-40V Dual Pch+Pch, DFN2020, Power MOSFET
UT6JB5
-40V Dual Pch+Pch, DFN2020, Power MOSFET UT6JB5
UT6JB5 is a DFN package MOSFET suitable for switching applications.

UT6JB5 is a DFN package MOSFET suitable for switching applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number UT6JB5
Product Name -40V Dual Pch+Pch, DFN2020, Power MOSFET
Polarity P-Channel
V(BR)DSS -40 volts
IDSS -3500 milliamps
QG 3.3 nC
PD 2000 milliwatts
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