The US6T8 is a dual PNP transistor in a TUMT6 (SOT-363T) package, designed for low-frequency amplification and driver applications. It has a collector-emitter voltage rating of −12 V, a collector current of −1.5 A, and a collector-emitter saturation voltage of ≤ −200 mV at IC = −500 mA and IB = −25 mA. The device features a DC current gain (hFE) of 270 to 680 at IC = −200 mA, a transition frequency of 400 MHz, and a power dissipation of 0.7 W per element when mounted on a 25 mm × 25 mm × 0.8 mm ceramic substrate. The package dimensions and thermal performance are specified for surface-mount applications, with junction temperature ranging from −55 °C to 150 °C. The part is compliant with RoHS and is intended for use in general electronic equipment.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | US6T8 | US6T8 |
| Product Name | PNP+PNP, SOT-363T, Driver Transistor | PNP+PNP Driver Transistor |
| Polarity | PNP | PNP |
