The UMT1N is a dual PNP transistor in a SOT-363 package, designed for general purpose small signal amplification. It features two independent transistor elements with a collector-emitter voltage rating of -50 V, collector current of -150 mA, and total power dissipation of 150 mW. The package measures 2.0 mm x 2.1 mm, enabling compact surface-mount assembly. Electrical characteristics include a DC current gain (hFE) of 120 to 560 at I_C = -1 mA and V_CE = -6 V, a transition frequency of 140 MHz, and collector-emitter saturation voltage of -500 mV max at I_C = -50 mA and I_B = -5 mA. It operates with a junction temperature up to 150 °C and is compatible with automated mounting systems.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMT1N | UMT1N |
| Product Name | PNP+PNP, SOT-363, General Purpose Amplification Transistor | PNP+PNP General Purpose Amplification Transistor |
| Polarity | PNP | PNP |
