UMH3N FHA is a dual NPN digital transistor with built-in bias resistors in an SOT-363 (UMT6) package, designed for automotive applications. Each transistor supports a collector-emitter voltage of 50 V and a collector current of 100 mA, with a power dissipation limit of 150 mW per device. The input resistance is 4.7 kΩ, and the DC current gain ranges from 100 to 600. The device is AEC-Q101 qualified and suitable for inverter, interface, and driver circuits. Mounting is compatible with UMT3 automatic placement systems, reducing board space and mounting cost.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMH3NFHA | UMH3NFHA |
| Product Name | NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) for automotive | NPN+NPN Digital transistor (Corresponds to AEC-Q101) |
| Polarity | NPN | NPN |
