The UMH1N is a dual NPN transistor packaged in a compact SOT-363 format, featuring built-in bias resistors of 22kΩ for each transistor. This design allows for easy circuit integration, enabling inverter configurations without the need for external input resistors. The device supports a maximum supply voltage of 50V and a collector current of up to 100mA, making it suitable for various applications including inverter circuits, interface circuits, and driver circuits. It is RoHS compliant and designed to minimize parasitic effects through the use of isolated thin-film resistors. The operating temperature range extends from -55°C to +150°C, ensuring reliability in diverse environments.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMH1N | UMH1N |
| Product Name | NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) | NPN+NPN Digital transistor(with built-in resistors) |
| Polarity | NPN | NPN |
