The UMD3N is a dual digital transistor in a SOT-363 package, integrating one NPN and one PNP transistor with built-in 10kΩ bias resistors for use in inverters, interfaces, and drivers. Each transistor has a maximum collector current of ±100mA and a collector-emitter voltage of ±50V. The total power dissipation is 150mW, with 120mW maximum per element. The device meets RoHS compliance and is packaged in 8mm wide tape on a 180mm reel, with 3000 units per reel. The junction temperature range is -55°C to +150°C.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMD3N | UMD3N |
| Product Name | NPN+PNP, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) | PNP+NPN Digital transistor (with built-in resistors) |
| Polarity | NPN; PNP | NPN; PNP |
