The UMB2N FHA is a dual PNP digital transistor with built-in bias resistors in a SOT-363 (UMT6) package, designed for automotive applications requiring compact, independent transistor elements in inverter, interface, and driver circuits. Each transistor supports a maximum collector current of 100 mA and a supply voltage of -50 V, with a total power dissipation limit of 150 mW. The device features an input resistance of 47 kΩ and a minimum DC current gain of 68 at -5 V and -5 mA. It is AEC-Q101 qualified and compatible with UMT3 automatic mounting machines, enabling reduced mounting cost and board area. The junction temperature range extends from -55°C to +150°C.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMB2NFHA | UMB2NFHA |
| Product Name | PNP+PNP, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) for automotive | PNP+PNP Digital transistor (Corresponds to AEC-Q101) |
| Polarity | PNP | PNP |
