The UMB11N is a dual PNP digital transistor with built-in bias resistors in a SOT-363 package, designed for use in inverters, interfaces, and drivers. Each transistor element has a maximum collector current of 100 mA and a supply voltage rating of -50 V. The device dissipates up to 150 mW per element, with an input resistance of 7 to 13 kΩ and a minimum DC current gain of 30. The junction temperature range extends to 150 °C, and the packaging supports automatic mounting on SMT3 machines. The part is supplied in a 3000-piece reel with 8 mm tape width.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | UMB11N | UMB11N |
| Product Name | PNP+PNP, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) | PNP+PNP Digital transistor (with built-in resistors) |
| Polarity | PNP | PNP |
