MOSFET 2N-CH 50V 0.2A UMT6 Product overview: UM6K33NTN from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 0.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-UM6K33NTN can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 50V 0.2A UMT6
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1116392-UM6K33NTN
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.2V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: UMT6
Maximum Power Dissipation: 120mW
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 200mA
Gate-Source Threshold Voltage: 1V @ 1mA
Max Input Capacitance: 25pF @ 10V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 200mA, 4.5V
Alternative Parts (Cross-Reference): BSS138DW-7-F; UM6K33N; UM6K33NTN; UM6K34NTCN;
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 50V 200mA 120mW Surface Mount UMT6
Mosfet Array 2 N-Channel (Dual) 50V 200mA 120mW Surface Mount UMT6
Mosfet Array 2 N-Channel (Dual) 50V 200mA 120mW Surface Mount UMT6
MOSFET 2N-CH 50V 0.2A UMT6
MOSFET 1.2V Drive Nch+Nch MOSFET
50V 200mA 2.2Ω@200mA,4.5V 120mW 1V@1mA 2 N-Channel SOT-363 MOSFETs ROHS
MOSFET, DUAL N-CH, 50V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-UM6K33NTN | UM6K33NTN | 1116392-UM6K33NTN | UM6K33NTNDKR-ND | UM6K33NTN | UM6K33NTN | UM6K33NTN | 10AC9329 |
| Product Name | 50V 0.2A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - UM6K33NTN | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, Dual N-Ch, 50V, Sot-363; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| Transconductance | 4.00E-4 kS | |||||||
| PD | 150 milliwatts | 120 milliwatts | 120 milliwatts | |||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
