Mosfet Array 2 N-Channel (Dual) 60V 250mA 150mW Surface Mount UMT6
Mosfet Array 2 N-Channel (Dual) 60V 250mA 150mW Surface Mount UMT6
Mosfet Array 2 N-Channel (Dual) 60V 250mA 150mW Surface Mount UMT6
MOSFET 2N-CH 60V 0.25A UMT6 Product overview: UM6K31NTN from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.25A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-UM6K31NTN can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 035974-UM6K31NTN
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: UMT6
Maximum Power Dissipation: 150mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 250mA
Gate-Source Threshold Voltage: 2.3V @ 1mA
Max Input Capacitance: 15pF @ 25V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 250mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 60V 0.25A UMT6
MOSFET, DUAL N-CH, 60V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:250mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power RoHS Compliant: Yes
MOSFET Trans MOSFET N-CH 60V 0.25A
MOSFET 2N-CH 60V 0.25A UMT6
MOSFET 2N-CH 60V 0.25A UMT6
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | UM6K31NTNCT-ND | 289-UM6K31NTN | 035974-UM6K31NTN | UM6K31NTN | 10AC9328 | UM6K31NTN | UM6K31NTN | 687-UM6K31NTN |
| Product Name | FET, MOSFET Arrays | 60V 0.25A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - UM6K31NTN | FET, MOSFET Arrays | Mosfet, Dual N-Ch, 60V, Sot-363; Transistor Polarity Rohm | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 2N-CH 60V 0.25A UMT6 |
| Package Type | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | SOT3; UMT6 | 6-TSSOP, SC-88, SOT-363 | TO-3; SOT3 | |||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| Transconductance | 2.50E-4 kS | |||||||
| PD | 150 milliwatts | 150 milliwatts | 150 milliwatts |
