ROHM Semiconductor GmbH 30V Nch+Pch Power MOSFET SP8M6HZG

SP8M6HZG is a 30V N-channel and P-channel power MOSFET in an SOP8 package, designed for switching applications. The N-channel device has a maximum drain-source voltage of 30V, continuous drain current of ±5.0A, and on-resistance of 51mΩ; the P-channel device has a maximum drain-source voltage of -30V, continuous drain current of ±3.5A, and on-resistance of 90mΩ. Total power dissipation is 2.0W. The device is AEC-Q101 qualified, RoHS compliant, halogen-free, and features Sn100% plating. Thermal resistance junction-to-ambient is 62.5°C/W on a ceramic board and 89.2°C/W on a copper board. Operating junction and storage temperature range is -55°C to +150°C.