SP8M4HZG is a 30V N-channel and P-channel power MOSFET dual in an SOP8 package, designed for switching applications. The N-channel device has a maximum drain-source voltage of 30V, continuous drain current of ±9.0A, and on-resistance up to 18mΩ at 10V gate voltage; the P-channel device has a maximum drain-source voltage of -30V, continuous drain current of ±7.0A, and on-resistance up to 28mΩ at -10V gate voltage. Total power dissipation is rated at 2.0W. The device is AEC-Q101 qualified, RoHS compliant, halogen-free, and features Sn100% plating. It operates over a junction and storage temperature range of -55°C to +150°C.
SP8M4HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Nch+Pch 30V MOSFETs with ESD protection diode is included in the SOP8 package. Ideal for switching applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SP8M4HZG |
| Product Name | 30V Dual Nch+Pch Power MOSFET |
| Polarity | N-Channel; P-Channel |
| V(BR)DSS | 30 volts |
| IDSS | 9000 milliamps |
| QG | 15 nC |
| PD | 2000 milliwatts |
