ROHM Semiconductor GmbH 30V Nch+Pch Power MOSFET SP8M3HZG

SP8M3HZG is a 30V N-channel and P-channel Power MOSFET in an SOP8 package, designed for switching applications. The N-channel device has a maximum drain-source voltage of 30V, continuous drain current of ±5.0A, and on-resistance of 51mΩ at 10V gate-source voltage; the P-channel device has a maximum drain-source voltage of -30V, continuous drain current of ±4.5A, and on-resistance of 56mΩ at -10V gate-source voltage. Both devices are rated for total power dissipation of 2.0W and operate over a junction temperature range of -55°C to +150°C. The device is AEC-Q101 qualified, RoHS compliant, and features halogen-free, Sn100% plating. The package is surface-mounted with a tape and reel packaging of 2500 pieces per reel.