SP8K32HZG is a dual N-channel power MOSFET designed for automotive applications, featuring a maximum drain-source voltage (V_DSS) of 60V and a maximum continuous drain current (I_D) of ¬±4.5A. The device is housed in a compact SOP8 package and has a low on-resistance (R_DS(on)) of 65mOc, which enhances efficiency in switching applications. It is AEC-Q101 qualified, ensuring reliability in automotive environments. The MOSFET also includes built-in ESD protection and is compliant with RoHS and halogen-free standards. With a power dissipation capability of 2.0W and a junction temperature rating of up to 150¬8C, this component is suitable for various high-performance applications.
SP8K32HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Two Nch 60V MOSFETs are included in the SOP8 package. Built-in ESD protection diode. Ideal for switching applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SP8K32HZG |
| Product Name | 60V Dual Nch+Nch Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 60 volts |
| IDSS | 4500 milliamps |
| QG | 7 nC |
| PD | 2000 milliwatts |
