SH8MC5 is a dual N-channel and P-channel 60V power MOSFET intended for switching applications, integrated in a SOP8 surface mount package. The N-channel device has a maximum continuous drain current of 6.5A and a drain-source on-resistance of up to 32mΩ at 10V gate-source voltage, while the P-channel device has a maximum continuous drain current of 7.0A and a drain-source on-resistance of up to 33mΩ at -10V gate-source voltage. Total power dissipation is rated at 2.0W. The device is RoHS compliant and halogen free, with an operating junction temperature range of -55°C to +150°C.
SH8MC5 is a low on-resistance MOSFET ideal for switching applications. This product includes two 60V MOSFETs in a small surface mount package (SOP8).
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | SH8MC5 |
| Product Name | 60V 6.5A/7.0A Dual Nch+Pch, SOP8, Power MOSFET |
| Polarity | N-Channel; P-Channel |
| V(BR)DSS | 60 volts |
| IDSS | 6500 milliamps |
| QG | 3.9 nC |
| PD | 2000 milliwatts |
