The SH8M24 is a 45V N-channel and P-channel power MOSFET in a SOP8 surface-mount package, designed for switching applications. It has a continuous drain current of ±6A and a power dissipation of 3.1W when mounted on a ceramic board. The N-channel FET has a maximum on-resistance of 46mΩ at 10V gate-source voltage, and the P-channel FET has 63mΩ at -10V gate-source voltage. The device is RoHS compliant and halogen-free. Thermal resistance is 62.5°C/W junction-to-ambient when mounted on a ceramic board. Junction temperature ranges from -55°C to +150°C.
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | SH8M24 | SH8M24 |
| Product Name | 45V Nch+Pch Power MOSFET | 45V Nch+Pch Power MOSFET |
| Polarity | N-Channel; P-Channel | N-Channel; P-Channel |
| V(BR)DSS | 45 volts | 45 volts |
| IDSS | 6000 milliamps | 6000 milliamps |
| QG | 6.8 nC | 6.8 nC |
| PD | 3100 milliwatts | 3100 milliwatts |
